• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The present invention provides a semiconductor device capable of simultaneously forming a storage node contact of a bit line contact and a capacitor, and improving a thermal cutting property between each contact, and a method of manufacturing the semiconductor device, the semiconductor device comprising: a semiconductor substrate; A first insulating film formed on the substrate and having first and second contact holes; A bit line contacting the substrate through the first contact hole; Second insulating film spacers formed on both sidewalls of the bit line; A third insulating film formed over the bit line; And a storage node electrode of the capacitor which contacts the substrate through the second contact hole and is formed on the first insulating film and is in contact with both sidewalls of the second insulating film spacer.
    公开号:KR19980053672A
    申请号:KR1019960072800
    申请日:1996-12-27
    公开日:1998-09-25
    发明作者:황치선
    申请人:김영환；현대전자산업 주식회사；
    IPC主号:
    专利说明:

    Semiconductor device and manufacturing method thereof
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a semiconductor device and a method for manufacturing the semiconductor device capable of simultaneously forming a bit line contact and a storage node contact of a capacitor and improving insulation characteristics between the contacts.
    In recent years, with the development of semiconductor technology, the demand for memory devices has soared, so that high integration is required to require high capacitance in a small area. Therefore, as a method for maximizing the capacity of the capacitor, a method of using an insulator having a high dielectric constant as the dielectric between electrodes or increasing the area of the electrode has been proposed.
    The above-described conventional capacitor and bit line forming method will be briefly described.
    Although not shown, an insulating film is formed on a semiconductor substrate provided with a predetermined transistor, and the insulating film is etched to expose a predetermined portion of one side of the substrate to form a first contact hole for forming a bit line. Subsequently, a first polysilicon film is deposited and patterned in the first contact hole and the insulating film to form a bit line, and a planarization film of an insulating material is formed on the bit line and the insulating film.
    Then, the planarization film and the insulating film are etched to expose a predetermined portion of the other side of the substrate to form a second contact hole for forming a capacitor, and to deposit and pattern the first polysilicon film inside the second contact hole and on the planarization film. To form a storage node electrode. Subsequently, a capacitor is completed by forming a dielectric film on the storage node electrode and depositing a third polysilicon film on the plate electrode to form a plate electrode.
    In the conventional bit line and capacitor formation described above, there is a problem that the process is complicated by forming each contact hole separately. On the other hand, in the related art, in order to simplify the process and gain the process, contact holes for forming bit lines and capacitors are simultaneously formed to simultaneously form storage node contacts of the capacitors and bit line contacts.
    However, when the storage node contact of the capacitor and the contact of the bit line are simultaneously formed as described above, the process margin between the bit line and the storage node contact is reduced. As a result, the insulation properties between the respective contacts are lowered, resulting in a problem of lowering the reliability of the device.
    Accordingly, the present invention has been made in view of the above-described problems, and provides a semiconductor device and a method of manufacturing the same, which can simultaneously form a storage node contact of a bit line contact and a capacitor and improve insulation characteristics between the contacts. The purpose is.
    1 is a plan view schematically showing a storage node contact and a bit line contact of a capacitor according to an embodiment of the present invention;
    2A to 2F are cross-sectional views illustrating a method of manufacturing a semiconductor device in accordance with an embodiment of the present invention.
    Explanation of symbols on the main parts of the drawings
    1 semiconductor substrate 2 first insulating film
    3a, 3b: first and second contact holes
    4, 8, 12: first to third polysilicon films
    5: first oxide film 6, 11: first and second photosensitive film pattern
    7: second oxide film spacer 9: third oxide film
    10 nitride film 12 second insulating film spacer
    100: bit line 200: storage node electrode
    A semiconductor device according to the present invention for achieving the above object is a semiconductor substrate; A first insulating film formed on the substrate and having first and second contact holes; A bit line contacting the substrate through the first contact hole; Second insulating film spacers formed on both sidewalls of the bit line; A third insulating film formed over the bit line; And a storage node electrode of the capacitor which contacts the substrate through the second contact hole and is formed on the first insulating layer and is in contact with both sidewalls of the second insulating layer spacer.
    The third insulating film is a film in which an oxide film and a nitride film are sequentially stacked, and the storage node electrode is in contact with the substrate through the second contact hole and is formed on the first insulating film. And a hemispherical polysilicon film formed on the polysilicon film and formed on both sidewalls of the second insulating film spacer.
    In addition, the method of manufacturing a semiconductor device according to the present invention for achieving the above object through the first and second contact holes on the semiconductor substrate formed with a first insulating film having a first and second contact holes thereon Forming a first polysilicon film in contact with the substrate at the same time; Forming a first oxide film on the first polysilicon film; Etching the first polysilicon layer and the first oxide layer on the first contact hole such that the first insulating layer adjacent to the first contact hole is partially exposed; Forming second oxide spacers on both sidewalls of the etched first polysilicon layer and the first oxide layer; Sequentially forming a second polysilicon film, a third oxide film, and a nitride film on the entire surface of the substrate; The nitride film, the third oxide film, and the second polysilicon film are etched to expose a predetermined portion of the upper portion of the first oxide film and the second oxide film spacer, and the first oxide film and the second oxide film spacer are etched to form a portion on the first contact hole. Forming a bit line connected to the first polysilicon film; Forming second insulating film spacers on both sidewalls of the bit line; And forming a third polysilicon layer on the second insulating layer spacer and the first polysilicon layer on the second contact hole to form a storage node electrode of a capacitor connected to the first polysilicon layer. It is done.
    In the forming of the bit line, the first and second oxide films are removed by wet etching, and the third polysilicon film is a polysilicon film having hemispherical grains.
    According to the present invention having the above-described configuration, the bit line contact and the storage node contact of the capacitor are simultaneously formed to simplify the process, and the bit line is formed to be surrounded by the insulating film spacer to improve the insulation characteristics between the bit line and the capacitor. Can be.
    EXAMPLE
    Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention.
    1 is a plan view schematically illustrating a storage node contact and a bit line contact of a capacitor according to an embodiment of the present invention. Although not shown in detail, the storage node contact and the bit line contact are alternately formed in the AA 'direction on the substrate. It is.
    Next, a method of manufacturing a semiconductor device according to an embodiment of the present invention will be described with reference to FIGS. 2A to 2F. 2A to 2F show sequential cross-sectional views along the direction of AA ′.
    First, as shown in FIG. 2A, a first insulating film 2 is formed on a semiconductor substrate 1 having a predetermined transistor, and the first insulating film 2 is etched to remove a predetermined portion of the substrate 1. Exposing to form the first and second contact holes (3a, 3b) for the formation of the capacitor and the bit line at the same time.
    As shown in FIG. 2B, a first polysilicon film 4 is formed inside the first and second contact holes 3a and 3b and on the insulating film 2, and on the first polysilicon film 4. Thereafter, a first oxide film 5, preferably a PSG film, which is easily wet etched, is formed. Subsequently, a first photosensitive film pattern 6 for forming a capacitor by photolithography is formed on the first oxide film 5.
    As shown in FIG. 2C, a first poly film formed in the second contact hole 3b by etching the lower first oxide film 5 and the first polysilicon film 4 using the first photoresist pattern 6. The silicon film 4 and the first insulating film 2 are partially exposed, and the first photosensitive film pattern 6 is removed by a known method. Subsequently, a thick second oxide film, preferably a PE (Plasma Enhanced) oxide film, is easily deposited on the entire surface of the substrate, and then anisotropic blanket etching is used to etch the first polysilicon film 4 and the first oxide film 5. The second oxide film spacers 7 are formed on both exposed sidewalls of the pattern.
    As shown in FIG. 2D, a second polysilicon film 8 for forming a bit line is formed on the structure of FIG. 2C, and a third oxide film 9 and a predetermined oxide mask, which will later serve as a predetermined etching mask, are formed thereon. The nitride film 10 to serve as an etch stop layer is sequentially formed. Subsequently, a second photosensitive film pattern 11 for forming a bit line is formed on the nitride film 10 by photolithography.
    As shown in FIG. 2E, the lower nitride film 10, the third oxide film 9, and the second polysilicon film 8 are etched using the second photoresist pattern 11 to form an upper portion of the first oxide film 5. And a predetermined portion of the second oxide film spacer 7 is exposed, and the second photosensitive film pattern 11 is removed by a known method. Subsequently, the bit line 100 is formed by wet etching the first oxide film 5 and the second oxide film spacer 7, and then a thick second insulating film, preferably an oxide film or a nitride film, is deposited on the entire surface of the substrate. The anisotropic blanket is etched to form an insulating film spacer 12 on both sidewalls of the nitride film 10, the third oxide film 9, and the second polysilicon film 8 that are exposed after etching.
    As shown in FIG. 2F, a third polysilicon film 13 having hemispherical grains is deposited on the structure of FIG. 2E, and the third polysilicon film is etched back so that the nitride film 10 is exposed, thereby storing the capacitor. The node electrode 200 is formed.
    A dielectric film and plate electrode are then formed on the structure of FIG. 2F, although not shown, to complete the capacitor.
    According to the above embodiment, the bit line contact and the storage node contact of the capacitor are simultaneously formed to simplify the process, and the bit line is formed to be surrounded by the insulating layer spacer, thereby improving the insulation characteristics between the bit line and the capacitor.
    In addition, this invention is not limited to the said Example, It can variously deform and implement within the range which does not deviate from the technical summary of this invention.
    权利要求:
    Claims (14)
    [1" claim-type="Currently amended] Semiconductor substrates;
    A first insulating film formed on the substrate and having first and second contact holes;
    A bit line contacting the substrate through the first contact hole;
    Second insulating film spacers formed on both sidewalls of the bit line;
    A third insulating film formed over the bit line;
    And a storage node electrode of the capacitor which contacts the substrate through the second contact hole and is formed on the first insulating layer and is in contact with both sidewalls of the second insulating layer spacer.
    [2" claim-type="Currently amended] The semiconductor device according to claim 1, wherein said second insulating film is an oxide film.
    [3" claim-type="Currently amended] The semiconductor device according to claim 1, wherein the second insulating film is a nitride film.
    [4" claim-type="Currently amended] The semiconductor device according to claim 1, wherein the third insulating film is a film in which an oxide film and a nitride film are sequentially stacked.
    [5" claim-type="Currently amended] The semiconductor device of claim 1, wherein the storage node electrode comprises: a polysilicon layer formed on the first insulating layer in contact with the substrate through the second contact hole;
    And a hemispherical polysilicon film formed on the polysilicon film and formed on both sidewalls of the second insulating film spacer.
    [6" claim-type="Currently amended] Forming a first polysilicon film on the semiconductor substrate having first and second contact holes formed thereon, the first polysilicon film contacting the substrate simultaneously with the first and second contact holes;
    Forming a first oxide film on the first polysilicon film;
    Etching the first polysilicon layer and the first oxide layer on the first contact hole such that the first insulating layer adjacent to the first contact hole is partially exposed;
    Forming second oxide spacers on both sidewalls of the etched first polysilicon layer and the first oxide layer;
    Sequentially forming a second polysilicon film, a third oxide film, and a nitride film on the entire surface of the substrate;
    The nitride film, the third oxide film, and the second polysilicon film are etched to expose a predetermined portion of the upper portion of the first oxide film and the second oxide film spacer, and the first oxide film and the second oxide film spacer are etched to form a portion on the first contact hole. Forming a bit line connected to the first polysilicon film;
    Forming second insulating film spacers on both sidewalls of the bit line; And,
    And forming a third polysilicon layer on the second insulating layer spacer and the first polysilicon layer on the second contact hole to form a storage node electrode of a capacitor connected to the first polysilicon layer. Method of manufacturing a semiconductor device.
    [7" claim-type="Currently amended] The method of claim 6, wherein the forming of the second oxide spacers
    Depositing a thick second oxide film on the entire surface of the substrate after etching the first polysilicon film and the first oxide film; And,
    And anisotropic blanket etching the second oxide film to expose the first oxide film.
    [8" claim-type="Currently amended] The method of claim 6, wherein in the forming of the bit line, the first and second oxide layers are removed by wet etching.
    [9" claim-type="Currently amended] The method of claim 8, wherein the first oxide film is a PSG film.
    [10" claim-type="Currently amended] The method of claim 8, wherein the second oxide film is a PE oxide film.
    [11" claim-type="Currently amended] The method of claim 6, wherein the forming of the second insulating layer spacer is performed.
    Depositing a thick second insulating film on the substrate on which the bit line is formed; And,
    And anisotropic blanket etching the second insulating film to expose the nitride film.
    [12" claim-type="Currently amended] 12. The method of claim 11, wherein the second insulating film is an oxide film.
    [13" claim-type="Currently amended] 12. The method of claim 11, wherein the second insulating film is a nitride film.
    [14" claim-type="Currently amended] 7. The method of manufacturing a semiconductor device according to claim 6, wherein the third polysilicon film is a polysilicon film having hemispherical grains.
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1996-12-27|Application filed by 김영환, 현대전자산업 주식회사
    1996-12-27|Priority to KR1019960072800A
    1998-09-25|Publication of KR19980053672A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019960072800A|KR19980053672A|1996-12-27|1996-12-27|Semiconductor device and manufacturing method thereof|
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